Read-only-memory array with coding after metallization

Details Read-only-memory array with coding after metallization Read-only-memory array with coding after metallization

1995-06-26

1996-10-01

Nguyen, Tan T.

Static information storage and retrieval

Read only systems

Semiconductive

36518517, 365 72, 365 94, 257390, G11C 1700

Patent

active

055616240

ABSTRACT:
A ROM array with coding after metallization comprises a plurality of first bit lines, a plurality of second bit lines, a plurality of third bit lines, a plurality of word lines, a plurality of first control lines, a plurality of second control lines and a plurality of selecting lines. Memory cells of the ROM array are formed by the intersection of the word lines and the first and second bit lines, wherein the word lines are polysilicon gates and the bit lines are drain/source diffusion regions. The third bit lines are metal lines above the first bit lines. The third bit lines are not wide enough to cover spacings between the first and second bit lines, thus exposing spaces for code implantation. The first and second control lines intersect the first and second bit lines to form a number of switches for controlling data reading paths to The memory cells. The positions and ON/OFF states of the switches are designed to provide at least two data reading paths to each memory cell. Thus, the sensing currents in the bit lines are increased and become more uniform.

REFERENCES:
patent: 5260894 (1993-11-01), Noda
patent: 5295092 (1994-03-01), Hotta
patent: 5383149 (1995-01-01), Hong

Affiliated with

Also associated with

Rating

Read-only-memory array with coding after metallization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read-only-memory array with coding after metallization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read-only-memory array with coding after metallization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1507304