Read only memory and integrated circuit and method of programmin

Details Read only memory and integrated circuit and method of programmin Read only memory and integrated circuit and method of programmin

1979-01-05

1980-11-11

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Semiconductive

365115, 307317R, G11C 1706

Patent

active

042336716

ABSTRACT:
A programmable read only memory (PROM) includes a first plurality of conductive lines, a second plurality of conductive lines and polycrystalline silicon material therebetween. At the crossing points of the first and second plurality of lines doped regions are provided in the polycrystalline silicon in contact with a second line and which extend at least partially through the material. To provide a diode interconnect at any crossing point, the associated region is irradiated by a laser beam to either cause diffusion of dopant atoms to the underlaying conductive line or activate implanted ions, thereby electrically interconnecting the first and second lines through a diode. The PROM is readily fabricated as part of a monolithic integrated circuit or electrical array and can be programmed after completion of the fabrication process.

REFERENCES:
patent: 3763476 (1973-10-01), Wilson et al.
patent: 3860915 (1975-01-01), Geier et al.
patent: 4130891 (1978-12-01), Kirkpatrick et al.

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