Read-only memory

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S104000

Reexamination Certificate

active

07447074

ABSTRACT:
An array of ROM cells, each formed of a transistor having a first drain or source region connected to a bit line connecting several transistors in a first direction, the gates of the different transistors being connected to word lines in a second direction perpendicular to the first one, the array comprising a repetition of an elementary pattern extending over three lines in each direction and comprising nine transistors arranged so that each of the lines of the elementary pattern comprises two cells, two neighboring transistors of each pattern in the first direction sharing a same second region connected to a ground line and being connected to different bit lines from a word line to the other.

REFERENCES:
patent: 4193125 (1980-03-01), Moriya
patent: 5732010 (1998-03-01), Takashima et al.
patent: 6363001 (2002-03-01), Borot et al.
patent: 6556468 (2003-04-01), Garg
patent: 7057916 (2006-06-01), Ferrant
patent: 2002/0044493 (2002-04-01), Bohm et al.
patent: 2003/0063505 (2003-04-01), Ferrant et al.
patent: 2003/0117851 (2003-06-01), Lee et al.
patent: 2004/0130948 (2004-07-01), Rolandi
patent: 2004/0141402 (2004-07-01), Kim
patent: 2005/0078521 (2005-04-01), Chen et al.
patent: 2006/0140007 (2006-06-01), Cernea et al.
patent: 2007/0025150 (2007-02-01), Lee
patent: 1 271 552 (2003-01-01), None
patent: 1 475 805 (2004-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Read-only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read-only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read-only memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4030983

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.