Read only memory

Details Read only memory Read only memory

1978-11-28

1980-03-11

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Semiconductive

365 51, 307238, G11C 1140

Patent

active

041931254

ABSTRACT:
A read only memory comprises a P-type substrate and a plurality of N.sup.+ -type diffusion layers arranged checkerwise on one major surface of the substrate in which four N.sup.+ -type diffusion layers having contacts are located at corners of an imaginary rectangle, and a fifth N.sup.+ -type region having a contact is formed substantially at the center of the imaginary rectangle. Between the fifth N.sup.+ -type diffusion layer and the first to fourth N.sup.+ -type diffusion layers four MOS transistors are formed for the single contact. Gate lines are provided, each extending between adjacent two N.sup.+ -type diffusion layers without overlapping them. Each of the four N.sup.+ -type diffusion layers also acts as a central N.sup.+ -type region of another imaginary rectangle adjacent to the first mentioned imaginary rectangle.

REFERENCES:
patent: 3702466 (1972-11-01), Nakagiri et al.

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