Read only memory

Details Read only memory Read only memory

1987-03-03

1988-05-31

Carroll, J.

357 2314, 357 41, 357 45, 357 54, 357 71, H01L 2978, H01L 2702, H01L 2934, H01L 2348

Patent

active

047484926

ABSTRACT:
A MOSFET read only memory is disclosed. A silicon material directly contacts a drain of a memory cell transistor formed in a silicon substrate to obtain a low contact resistance. A drain electrode layer partially covers two oxide films which are above a gate electrode, to increase a contact area between a metal wiring layer constituting an output line and the drain electrode layer.

REFERENCES:
patent: 4291322 (1981-09-01), Clemens et al.
patent: 4322824 (1982-03-01), Allan
patent: 4341009 (1982-07-01), Bartholomew et al.
patent: 4372031 (1983-02-01), Tsaur et al.
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4403394 (1983-09-01), Shepard et al.
patent: 4446613 (1984-05-01), Beinglass et al.
patent: 4476482 (1984-10-01), Scott et al.
patent: 4516147 (1985-05-01), Komatsu et al.
Masuoka, et al., "A New Mask ROM Cell Programmed by Through-Hole Using Double Polysilicon Technology," reprinted from Proceedings of the IEEE International Electron Devices Meeting (Dec. 1983), pp. 577-580.

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