Read only memory

Details Read only memory Read only memory

1980-02-25

1982-06-01

Moffitt, James W.

Static information storage and retrieval

Read only systems

Semiconductive

365178, G11C 1700

Patent

active

043331645

ABSTRACT:
A read only memory (ROM) comprising word lines, bit lines, virtual ground lines and memory cells of FETs arranged on intersections of the word lines and bit lines. A gate of each cell is connected to one of the word lines. A drain of each cell is connected to one of the bit lines. A source of each cell is connected to one of the virtual ground lines. According to the invention, the particular cells storing information "0" are depletion-type transistors, the threshold voltage of which being lowered by ion implantation. When the ROM is in operation with respect to the memory cells on a selected bit line, the potential difference between a selected word line and a selected virtual ground line is enough to turn on the depletion-type cell but not enough to turn on the other cells, and the potential difference between a nonselected word line and the selected virtual ground line is not enough to turn on the depletion-type cell.

REFERENCES:
patent: 4059826 (1977-11-01), Rogers
patent: 4230504 (1980-10-01), Kuo

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