Read-only memory

Details Read-only memory Read-only memory

1989-02-14

1990-03-27

Popek, Joseph A.

Static information storage and retrieval

Read only systems

Semiconductive

365210, G11C 1700

Patent

active

049126741

ABSTRACT:
A mask-programmed ROM includes depletion type load MOSFETs provided between data lines in a memory array and a power supply voltage, the MOSFETs having a ground potential of the circuit applied to their gates. Reading of data is carried out by an amplifying MOSFET which supplies a current to a selected data line through a depletion type MOSFET which is supplied at its gate with the circuit ground potential. Thus, bias voltages which are respectively applied to the data lines and a sense amplifier which receives a signal read out from a selected data line are made equal to each other, thereby achieving a high-speed read operation.

REFERENCES:
patent: 4287571 (1981-09-01), Chakravarti et al.
patent: 4388705 (1983-06-01), Sheppard
patent: 4661926 (1987-04-01), Lee
patent: 4805143 (1989-02-01), Matsumoto et al.

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