Read-only memory

Details Read-only memory Read-only memory

1978-03-23

1979-08-21

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

Semiconductive

365185, G11C 1700, G11C 1706

Patent

active

041655389

ABSTRACT:
A read-only memory wherein a memory cell is included at each cross point between word lines and bit lines. The memory cell includes a pair of programmable nonvolatile gating elements, rendered conductive and nonconductive respectively, to permit a second gating element to connect first and second potential sources to said bit lines.

REFERENCES:
krick, Complementary MNOS Electrically Alterable Read-Only Memory, IBM Tech. Disc. Bul., vol. 13, No. 1, 6/70, pp. 263-264.
Jordan et al., Read-Only Memory, IBM Technical Disc. Bul., vol. 14, No. 7, 12/71, pp. 2132-2135.
Askin, Single Device Push-Pull Read-Only Storage Cell, IBM Technical Disclosure Bulletin, 10/73, vol. 16, No. 5, p. 1642.

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