Read method for reading data from a high-density semiconductor r

Details Read method for reading data from a high-density semiconductor r Read method for reading data from a high-density semiconductor r

1997-11-06

1999-07-20

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518523, 365100, G11C 1604

Patent

active

059264179

ABSTRACT:
A read method for reading data from a ROM device is provided, which can be operated with a higher voltage to address the memory cells in the ROM device. The ROM device are formed with word and bit lines formed from metallization layers having a very low resistance so that the data current can be increased for increased performance. This read method is for use on a ROM device of the type including an array of memory cells formed at the intersections between a plurality of word lines and a plurality of bit lines. Of these memory cells, a first selected group are set to a permanently-ON state due to the forming of a contact window connecting the associated word line to the associated bit line, and a second selected group of the memory cells are set to a permanently-OFF state due to the forming of no contact window therein. The read method includes the steps of applying a high potential to the associated bit line of the currently addressed one of the memory cells while floating all of the other bit lines, and meanwhile applying a ground potential to the associated word line of the currently addressed one of the memory cells while floating all of the other word lines.

REFERENCES:
patent: 5663903 (1997-09-01), Guo
patent: 5684733 (1997-11-01), Wu et al.

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