Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-07-07
1995-09-12
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, H01L 2702
Patent
active
054499470
ABSTRACT:
A "read-disturb" resistant metal-to-metal antifuse includes a lower electrode comprising a first metal layer in a microcircuit structure. An inter-metal dielectric is disposed over the lower electrode and includes an antifuse aperture disposed therein. A first layer of antifuse material is disposed over exposed surface of the lower electrode in the antifuse aperture. A highly conductive layer is disposed over the first region of antifuse material and a second layer of antifuse material is disposed over the highly conductive layer. An upper electrode comprises a second metal layer disposed over the second layer of antifuse material. The first and second layers of antifuse material may comprise single-layer or multi-layer dielectric materials, amorphous silicon, or combinations of these materials. A process for fabricating a read-disturb resistant metal-to-metal antifuse comprises the steps of forming a lower electrode comprising a portion of a first metal layer in a microcircuit structure; forming an inter-metal dielectric layer over the lower electrode; forming an antifuse aperture in the inter-metal dielectric layer to expose the upper surface of the lower electrode; forming a first layer of antifuse material over the exposed surface of the lower electrode in the antifuse aperture; forming a highly conductive layer over the first layer of antifuse material; forming a second layer of antifuse material over the highly conductive layer; and forming an upper electrode comprising a second metal layer over the second layer of antifuse material.
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Chen Wenn-Jei
Chiang Steve S.
Elashmawi Esam
Actel Corporation
Carroll J.
LandOfFree
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