Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-01-25
2011-01-25
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185090, C365S185180
Reexamination Certificate
active
07876620
ABSTRACT:
Read disturb is reduced in non-volatile storage. In one aspect, when a read command is received from a host for reading a selected word line, a word line which is not selected for reading is randomly chosen and its storage elements are sensed to determine optimized read compare levels for reading the selected word line. Or, a refresh operation may be indicated for the entire block based on an error correction metric obtained in reading the storage elements of the chosen word line. This is useful especially when the selected word line is repeatedly selected for reading, exposing the other word lines to additional read disturb. In another aspect, when multiple data states are stored, one read compare level is obtained from sensing, e.g., from a threshold voltage distribution, and other read compare levels are derived from a formula.
REFERENCES:
patent: 5038703 (1991-08-01), Frush
patent: 5867429 (1999-02-01), Chen
patent: 6018477 (2000-01-01), Wang
patent: 6026024 (2000-02-01), Odani et al.
patent: 6587378 (2003-07-01), Hassan et al.
patent: 6657891 (2003-12-01), Shibata et al.
patent: 6668303 (2003-12-01), Pio
patent: 6707714 (2004-03-01), Kawamura
patent: 6751766 (2004-06-01), Guterman et al.
patent: 6879520 (2005-04-01), Hosono et al.
patent: 6961267 (2005-11-01), Fastow et al.
patent: 7012835 (2006-03-01), Gonzalez et al.
patent: 7057935 (2006-06-01), Chevallier
patent: 7141763 (2006-11-01), Moroz
patent: 7173851 (2007-02-01), Callahan et al.
patent: 7177977 (2007-02-01), Chen et al.
patent: 7187592 (2007-03-01), Guterman et al.
patent: 7193901 (2007-03-01), Ruby et al.
patent: 7196928 (2007-03-01), Chen
patent: 7262994 (2007-08-01), Fong et al.
patent: 7310272 (2007-12-01), Mokhlesi et al.
patent: 7447076 (2008-11-01), Mokhlesi
patent: 7684247 (2010-03-01), Mokhlesi
patent: 2005/0162913 (2005-07-01), Chen
patent: 2006/0101193 (2006-05-01), Murin
patent: 2007/0091677 (2007-04-01), Lasser
patent: 2007/0101238 (2007-05-01), Resnick
patent: 2007/0211532 (2007-09-01), Gonzalez
patent: 2007/0279982 (2007-12-01), Shibata
patent: 2007/0291546 (2007-12-01), Kamei
patent: 2008/0056025 (2008-03-01), Kanagawa et al.
patent: 2008/0263266 (2008-10-01), Sharon
patent: 2009/0024905 (2009-01-01), Shalvi et al.
patent: 2009/0323412 (2009-12-01), Mokhlesi
International Search Report and Written Opinion of the International Searching Authority, dated Aug. 28, 2009, PCT Patent Appl. No. PCT/US2009/048990.
Amendment dated Apr. 7, 2010, U.S. Appl. No. 12/165,302, filed Jun. 30, 2008.
Notice of Allowance dated Sep. 1, 2010, U.S. Appl. No. 12/165,302, filed Jun. 30, 2008.
Mokhlesi Nima
Schuegraf Klaus
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
Yoha Connie C
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