Read command triggered synchronization circuitry

Static information storage and retrieval – Addressing – Sync/clocking

Reexamination Certificate

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C365S227000

Reexamination Certificate

active

10922429

ABSTRACT:
A memory READ command triggered clock synchronization mode turns on a clock synchronization circuit only for memory READ operations. The clock synchronization circuit achieves a signal lock with the reference clock signal in less time than the column address strobe latency. Precise memory READ operations are thus possible without wasting power when such operations are not performed by allowing the clock synchronization circuitry to be turned off.

REFERENCES:
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patent: 6842396 (2005-01-01), Kono
Daeyun Shim et al., “An Analog Synchrobnous Mirror Delay for High-Speed DRAM Application”, IEEE Journal of Solid-State Circuits, vol. 34, No. 4, pp. 484-493, Apr. 1999.
Takanori Saeki et al., “A 2.5-ns Clock Access, 250-MHz, 256-Mb SDRAM with Synchronous Mirror Delay”, IEEE Journal of Solid-State Circuits, vol. 31, No. 11, pp. 1656-1668, Nov. 1996.

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