Read bias scheme for phase change memories

Induced nuclear reactions: processes – systems – and elements – Nuclear transmutation – By neutron bombardment

Reexamination Certificate

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C365S163000

Reexamination Certificate

active

10633872

ABSTRACT:
A read bias scheme may be used for phase change memories including a chalcogenide access device and a chalcogenide memory element. Through an appropriate read bias scheme, desirable read margin can be achieved. This may result in better yield, higher reliability, and ultimately lower costs in some cases.

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