Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-01-04
2005-01-04
Lam, David (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S211000
Reexamination Certificate
active
06839281
ABSTRACT:
In a non-volatile memory, the read parameter used to distinguish the data states characterized by a negative threshold voltage from the data states characterized by a positive threshold voltage is compensated for the memory's operating conditions, rather than being hardwired to ground. In an exemplary embodiment, the read parameter for the data state with the lowest threshold value above ground is temperature compensated to reflect the shifts of the storage element populations on either side of the read parameter. According to another aspect, an erase process is presented that can take advantage the operating condition compensated sensing parameter. As the sensing parameter is no longer fixed at a value corresponding to 0 volts, instead shifling according to operating conditions, a sufficient margin is provided for the various erase verify levels even at lowered operating voltages.
REFERENCES:
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patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6459620 (2002-10-01), Eshel
patent: 6560152 (2003-05-01), Cernea
Chen Jian
Quader Khandker N.
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