Reactor vessel for the growth of heterojunction devices

Details Reactor vessel for the growth of heterojunction devices Reactor vessel for the growth of heterojunction devices

1991-03-12

1992-01-07

Chaudhuri, Olik

Metal working

Barrier layer or semiconductor device making

118715, 118720, 118725, 118730, 156610, H01L 21205

Patent

active

050778757

ABSTRACT:
A metalorganic chemical vapor deposition (MOCVD) reactor vessel is provided for the growth of Group II-VI, Group III-V, or Group IV layers particularly for use in thin heterostructure devices. The reactor vessel includes a chamber having a top surface substantially parallel to a semiconductor substrate disposed within the chamber and an inlet through which a vapor stream is directed. The chamber further includes a plate having a plurality of apertures disposed therethrough and a block disposed adjacent to the plate, to increase the uniformity and decrease the turbulence of the vapor stream.

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