Reactor for vapor phase epitaxy

Details Reactor for vapor phase epitaxy Reactor for vapor phase epitaxy

1985-06-25

1987-12-22

Straub, Gary P.

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

427 72, 4272555, 118725, 118730, 156610, 156612, 156613, 156DIG98, C30B 3500, C30B 2510, C23C 1600, B05D 512

Patent

active

047145943

ABSTRACT:
A reactor for vapor phase epitaxy, wherein to bring about a vapor phase epitaxial growth or epitaxy on one face of a substrate, the latter is heated and placed in an epitaxy gas stream flowing in a given direction and the face is kept parallel to the direction and in a position where the gases play upon the same and such performs rotary movement about an axis which is perpendicular to the face and to the direction.

REFERENCES:
patent: 3436255 (1969-04-01), Harris et al.
patent: 3696779 (1972-10-01), Murai et al.
patent: 3981791 (1976-09-01), Rosvold
patent: 4063974 (1977-12-01), Fraas
patent: 4082865 (1978-04-01), Ban et al.
patent: 4131496 (1978-12-01), Weitzel et al.
patent: 4222345 (1980-09-01), Bergfelt et al.
patent: 4284033 (1981-08-01), del Rio
patent: 4373988 (1983-02-01), Bauser et al.
patent: 4526805 (1985-07-01), Yoshizawa
French Search Report, FR 84 10 154.

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