Reactor for uniform heating of a substrate

Details Reactor for uniform heating of a substrate Reactor for uniform heating of a substrate

1993-06-24

1996-01-02

Chaudhuri, Olik

Coating apparatus

Gas or vapor deposition

With treating means

118728, C23C 1600

Patent

active

054804892

ABSTRACT:
A film forming device having a support bed for mounting a semiconductor substrate thereon, a heating device for heating the semiconductor substrate by way of the support bed and a source gas supply means for supplying a source gas for growing a thin film on the semiconductor substrate, wherein the support bed is divided into a contact portion in contact at least with the semiconductor substrate and a fixed portion which is disposed to the outer circumference of the support bed and fixed to side walls of a reaction chamber. Preferably, the contact portion of the support bed is made of a material having high heat conductivity, while the fixed portion is made of a material having low heat conductivity. The temperature distribution of the susceptor and the distribution for the thickness of the film formed can be improved, as well as particles can be suppressed.

REFERENCES:
patent: 5094885 (1992-03-01), Selbrede
patent: 5119761 (1992-06-01), Nakata
patent: 5233163 (1993-08-01), Mieno et al.

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