Reactor for plasma desmear of high aspect ratio hole

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

156345, 156643, 204192E, C23F 100, B44C 122

Patent

active

046018077

ABSTRACT:
A system for generating uniform gas flow in a plasma reactor chamber. A hollow electrode having two major surfaces and a plurality of apertures in both major surfaces is disposed in the chamber. Connected to this hollow electrode is a radio frequency power source for generating an electrical field. A second hollow electrode also having two major surfaces with a plurality of apertures in both surfaces is disposed opposite the first electrode. A second radio frequency power source is connected to the second electrode. A substrate is placed in the chamber between the first and second electrodes. Provision is made for introducing a gas to be converted in a reactive species by the radio frequency electrical field so that gas is uniformly distributed across the substrate. '

REFERENCES:
patent: 4264393 (1981-04-01), Gorin et al.
patent: 4282077 (1981-08-01), Reavill
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4425210 (1984-01-01), Fazlin

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