Reactor for heating semiconductor substrates

Details Reactor for heating semiconductor substrates Reactor for heating semiconductor substrates

1987-01-05

1989-02-28

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118728, 118730, C23C 1600

Patent

active

048075620

ABSTRACT:
A chemical vapor deposition (CVD) reactor includes a vertically mounted multi-sided susceptor with means to adjust the gas flow across the width of each susceptor face. Gas can be fed thru the inside of the susceptor to various distribution devices positioned inside or above the susceptor. A pyrolytic graphite heat shield inside the susceptor insulates against overheating the input gases. Susceptors with various shaped sections form gas flow channels for each face of the susceptor. Reflective reactor tube coatings are used to conserve energy and to minimize crystal slip.

REFERENCES:
patent: 4446817 (1984-05-01), Crawley
patent: 4579080 (1986-04-01), Martin

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