Reactor for epitaxial growth

Details Reactor for epitaxial growth Reactor for epitaxial growth

1991-12-05

1992-10-06

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118730, 118500, C23C 1600

Patent

active

051528428

ABSTRACT:
A reactor for epitaxial growth wherein a susceptor on which semiconductor wafers are placed is heated by a heater, while rotating around a vertically provided gas feed pipe in a bell jar and a gas introduced through the gas feed pipe into the bell jar is decomposed to deposite a crystalline semiconductor material on the wafers, the susceptor having a plurality of pockets for positioning the wafers in which the pockets are arranged on the uniform temperature region of the susceptor other than the temperature-unstable peripheral portion thereof, thereby preventing production of defective products due to dislocation in crystal growth.

REFERENCES:
patent: 3721210 (1973-03-01), Helms
patent: 3783822 (1974-01-01), Wollam
patent: 3845738 (1974-11-01), Berkman

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