Reactor for depositing a layer on a moving substrate

Details Reactor for depositing a layer on a moving substrate Reactor for depositing a layer on a moving substrate

1988-03-11

1990-05-01

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Running length work

118719, 118723, C23C 1650

Patent

active

049209175

ABSTRACT:
A solar cell having a layered structure with improved characteristics can be manufactured in plasma assisted CVD at a high rate deposition. In one aspect, separators are arranged between discharge electrodes to control a distribution of the composition of a reaction gas in a reaction chamber, giving a desired composition profile of a layer in the direction of the layer thickness. In another aspect, a grid electrode is inserted between a substrate and one of discharge electrodes only near an entrance portion thereof so that a high power can be applied to discharge electrodes to increase a deposition rate without plasma damage to an interface between a layer to be deposited and an underlying substrate. In a further aspect, an electric-field-adjusting means such as a metal wire is provided with an opening of a mask arranged between a substrate and one of the discharge electrodes for controlling the quality and layer thickness of a layer to be deposited. This electric-field adjusting means makes the electric field distribution uniform in the mask opening, thereby preventing a nonuniformity of the characteristics of a deposited layer.

REFERENCES:
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4450787 (1984-05-01), Weakliem
Technical Digest P-I-16 1st Photovoltaic Science and Engineering Conference Nov. 13-16/1984 pp. 187-190.

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