Reactor design for uniform chemical vapor deposition-grown films

Details Reactor design for uniform chemical vapor deposition-grown films Reactor design for uniform chemical vapor deposition-grown films

1985-02-19

1987-03-17

Smith, John D.

Coating apparatus

Gas or vapor deposition

118719, 118728, 156611, H01L 21205

Patent

active

046498591

ABSTRACT:
A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

REFERENCES:
patent: 3472684 (1969-10-01), Walther
patent: 3735727 (1973-05-01), Sussmann
patent: 4108106 (1978-08-01), Dozier
patent: 4354455 (1982-10-01), Looney
patent: 4421786 (1983-12-01), Mahajan
Eshbach et al. "Emitter Diffusion System", IBM TDB, vol. 13, No. 6, Nov. 1970, p. 1459.

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