Reactor apparatus for semiconductor wafer processing

Details Reactor apparatus for semiconductor wafer processing Reactor apparatus for semiconductor wafer processing

1984-10-19

1987-09-22

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118728, 118729, 118500, 156345, 156643, C23C 1308

Patent

active

046947795

ABSTRACT:
A basic cell for a carrier of semiconductor wafers to permit high-volume, cold wall chemical vapor deposition, including plasma-enhanced CVD. The basic cell has two surfaces, each bearing a wafer or wafers facing and tapering toward each other. Process gases are passed from the wider gap to the narrower gap between the surfaces. Basic cells may be arranged to form a circular carrier with process gases flowing inward to the center of the carrier for a high volume CVD reactor. The basic cell may also be used for plasma etching reactors.

REFERENCES:
patent: 3365336 (1968-01-01), Folkmann et al.
patent: 3460510 (1969-08-01), Currin
patent: 3594242 (1971-07-01), Burd et al.
patent: 3696779 (1972-10-01), Murai et al.
patent: 3699298 (1972-10-01), Briody
patent: 3704987 (1972-12-01), Arndt et al.
patent: 4033287 (1977-07-01), Alexander, Jr. et al.
patent: 4522149 (1985-06-01), Garbis et al.
Pegge, "High-Capacity Narrow Susceptor for Vapor Growth Processes", IBM Technical Disclosure Bulletin, vol. 13, No. 3, Aug. 1970, pp. 804-805.

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