Reactor apparatus for plasma etching or deposition

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

118620, 118728, 156643, 204192E, 204298, 250531, B44C 122, C03C 1500, C03C 2506

Patent

active

042643937

ABSTRACT:
Plasma reactor apparatus which provides improved uniformity of etching or deposition. A uniform radio frequency (RF) field is established between two closely spaced parallel plates disposed within the reactor. One of the plates functions as a manifold for the reactant gases, mixing the gases and dispensing them through a regular array of orifices into the RF field between the plates. The uniformity results from a combination of the uniform field, the uniform dispersion of reactant gases, and the close proximity of the gas dispersal to the work pieces. The capacity of the apparatus can be increased by repeating the parallel plate structure in a stacked array of alternating grounded and RF energized plates.

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patent: 3654108 (1972-04-01), Smith
patent: 3733258 (1973-05-01), Hanak et al.
patent: 3971684 (1976-07-01), Muto
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 4066037 (1978-01-01), Jacob
patent: 4148705 (1979-04-01), Battey et al.

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