Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1984-10-23
1986-06-24
Niebling, John F.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
204192SP, 427 38, 427 86, C23C 1500
Patent
active
045966451
ABSTRACT:
A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.
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Jonath et al, "Copper Sulfide Films Deposited by Cylindrical Magnetron Reactive Sputtering," J. Vac. Sci. Technol., 16(2), Mar./Apr. 1979.
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Thornton et al, "Reactive Sputtered Copper Indium Diselenide Films for Photovoltaic Applications," J. Vac. Sci. Technol. A2(2), Apr.-Jun. 1984.
California Institute of Technology
Chapman Terryence
Niebling John F.
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