Reactively compensated power transistors

Details Reactively compensated power transistors Reactively compensated power transistors

1994-08-15

1996-05-21

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Integrated circuits

330286, 330295, H03F 314, H03F 360, H03F 368

Patent

active

055193587

ABSTRACT:
A transistor for amplifying a high-frequency signal comprises multiple unit transistors arranged about a center transmission line 122 and features reactive compensation 140 along the transmission line to provide signals at the output of the unit transistors which generally add in-phase. This has advantages in that a larger or more distributed transistor arrangement than can traditionally be used is made possible without incurring the gain or power degradation associated with the phase differences of signals amplified by unit transistors occurring at distant points along the center transmission line. The reactive compensation includes a capacitor 140 at the end of the transmission line 122 that may be fabricated along with the transistor as a portion of a monolithic integrated circuit.

REFERENCES:
patent: 4733195 (1988-03-01), Tserng et al.
patent: 5355095 (1994-10-01), Nathanson et al.
Bayraktaroglu, et al., "5 W Monolithic HBT Amplifier for Broadband X-Band Applications," IEEE 1990 Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 43-45.
Bayraktaroglu, et al., "2.5 W CW X-Band Heterojunction Bipolar Transistor," IEEE MTT-S Digest, pp. 1057-1060.

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