Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1982-09-30
1984-11-20
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148174, 204192S, C23C 1108
Patent
active
044837259
ABSTRACT:
The low temperature method for depositing multiconstituent material on a substrate uses at least two ballistic particle streams that are caused to intersect in a volume of space proximate to the substrate. One particle stream, the "gas" stream, comprises excited neutral particles, and the other particle stream, the "metal" stream, consists substantially of a particle species capable of chemically reacting with the excited neutrals. The excited neutrals are typically produced in a RF-generated plasma or by means of photon excitation, the source of the metal stream is typically an evaporator or a Knudsen cell. Charged particles can be removed from the gas stream by means of magnetic and/or electric fields, and their removal typically advantageously affects the electrical properties of the deposits. The method has broad applicability, and can be used, for instance, to deposit high quality stoichiometric oxide or nitride films on silicon, germanium, III-V or II-VI semiconductors, metals, or insulators, as well as to deposit doped or layered multiconstituent films. Because deposition can take place at very low substrate temperatures, generally between about 30.degree. C. and 250.degree. C., a patterned deposit can be produced by deposition onto a resist-masked substrate, followed by, removal of the resist by, e.g., lift-off.
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Aspnes, Optical Properties of Solids:New Developments, Chap. 15; 1976.
AT&T Bell Laboratories
Kastler S.
Pacher Eugen E.
Rutledge L. Dewayne
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