Reactive sputtering system

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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C23C 1434

Patent

active

053404599

ABSTRACT:
A reactive sputtering system is provided with a side gas distribution pipe for introducing a reactive gas and argon gas into a reaction chamber and a ring-shaped gas distribution pipe for introducing the argon gas or reactive gas into the reaction chamber independently of the side gas distribution pipe, whereby the concentration of the reactive gas can be controlled with respect to a target in the diameter direction thereof to equalize the reaction between the reactive gas and the target material above the surface of the target and thus to provide an improved uniformity of the quality film.

REFERENCES:
patent: 4572842 (1986-02-01), Dietrich et al.
patent: 5108571 (1992-04-01), Ludwig et al.
patent: 5135581 (1992-08-01), Tran et al.
patent: 5169509 (1992-12-01), Latz et al.

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