Reactive sputter etching of aluminum

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204298, C23C 1500

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active

043870139

ABSTRACT:
An improved sputter etching apparatus for etching a substrate with a reactive gas. The improvement in the apparatus comprises utilizing a cryogenic pump as the vacuum means to evacuate the plasma chamber. The improved apparatus of the invention is particularly useful for the reactive sputter etching of aluminum substrates utilizing a highly reactive gas such as boron trichloride.

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Mundt R., Patel K. C. and Cowen K., Etch Uniformity in a CCl.sub.4 Plasma Aluminum Etch, IEEE-IEDM, pp. 409-411 (1980).

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