Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1981-08-24
1983-06-07
Demers, Arthur P.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
204298, C23C 1500
Patent
active
043870139
ABSTRACT:
An improved sputter etching apparatus for etching a substrate with a reactive gas. The improvement in the apparatus comprises utilizing a cryogenic pump as the vacuum means to evacuate the plasma chamber. The improved apparatus of the invention is particularly useful for the reactive sputter etching of aluminum substrates utilizing a highly reactive gas such as boron trichloride.
REFERENCES:
patent: 3719052 (1973-03-01), Whitl
patent: 3788096 (1974-01-01), Brilloit
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4263730 (1981-05-01), Hirose et al.
Vossen, et al., Thin Film Processes, Academic Press, N.Y., N.Y., 1978, pp. 340-341.
Lazarev et al., Cryogenics, 1979, pp. 499-504.
Schwenterly Proceedings of the Seventh Conf. Engineering Problems of Fusion Research, Knoxville, Tenn., Oct. 25-27, 1977.
Kirk-Othmer Encyclopedia of Chem. Technology, vol. 21, pp. 126-137, 144-145, 147-151, 155.
Hess, Plasma Etching of Aluminum, Solid State Technology, Apr. 1981, 189-194.
Donnelly et al., Anisotropic Etching in Chlorine-Containing Plasmas, Solid State Technology, Apr. 1981, 161-166.
Mizutani et al., Jap. Patent No. 80 06 407 (1980), Chem. Abstracts abstract supplied.
Schaible et al., Reactive Ion Etching of Aluminum and Aluminum Alloys in an RF Plasma Containing Halogen Species, J. Vac. Sci. Technol. 15, 334-337 (1978).
Tokunaga et al., Plasma Etching of Aluminum in Carbon Tetrachloride, Electrochem Soc. Extend. Abstract 79-2, 1527-28 (1979).
Booth et al., Application of Plasma Etching Techniques to Metal-Oxide-Semiconductor (MOS) Processing, Thin Solid Films 65, 111-123 (1980).
Meusemann, Reactive Sputter Etching and Reactive Ion Milling-Selectivity, Dimensional Control, and Reduction of MOS-Interface Degradation, J. Vac. Sci, Technol. 16, 1886-1888 (1979).
Coburn et al., Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and its Compounds, Solid State Technology, Apr. 1979, 117-124.
Vossen, Glow Discharge Phenomena in Plasma Etching and Plasma Deposition, J. Electrochem Soc. 126, No. 2, 319-324 (1979).
Tokunaga K., Redeker F. C., Danner D. A. and Hess D. W., Comparison of Aluminum Etch Rates in Carbon Tetrachloride and Boron Trichloride Plasmas, J. Electrochem. Soc. 128, pp. 851-855 (1981).
Mundt R., Patel K. C. and Cowen K., Etch Uniformity in a CCl.sub.4 Plasma Aluminum Etch, IEEE-IEDM, pp. 409-411 (1980).
Frick Klaus
Lehmann Hans W.
Widmer Roland W.
Demers Arthur P.
Morris Birgit E.
RCA Corporation
Swope R. Hain
LandOfFree
Reactive sputter etching of aluminum does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reactive sputter etching of aluminum, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive sputter etching of aluminum will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2342297