Reactive sputter etching apparatus

Details Reactive sputter etching apparatus Reactive sputter etching apparatus

1980-07-21

1982-01-05

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192E, C23C 1500

Patent

active

043092675

ABSTRACT:
An rf sputter etch or reactive sputter etch apparatus which can be used for etching substrates at oblique angles utilizes a cathode formed from a metal grid and an equipotential enclosure. The substrate is supported in the enclosure either parallel to or at an oblique angle to the surface of the grid.

REFERENCES:
patent: 3526584 (1970-09-01), Shaw
patent: 3730873 (1973-05-01), Pompei et al.
patent: 3943047 (1976-03-01), Cruzan et al.
patent: 4131506 (1976-12-01), Namba et al.
Y. Budo et al., "Multiusage of Sputter & Sputter Etch", IBM Tech. Discl. Bull., vol. 15, p. 1695 (1972).
S. Somekh, "Introduction to Ion & Plasma Etching", J. Vac. Sci. Tech., vol. 13, pp. 1003-1007 (1976).
S. Somekh et al., "Dry Processing of High Resolution & High Aspect Ratio Structures Inc GaAs-Al.sub.x Ga.sub.1-x As For Integrated Optics", Applied Optics, vol. 16, pp. 126-136, (1977).
H. W. Lehmann et al., "Profile Control by Reactive Sputter Etching", J. Vac. Sci. Tech., vol. 15, pp. 319-326 (1978).
G. D. Boyd et al., "Directional Reactive Ion Etching at Oblique Angles", Appl. Phys. Lett., vol. 36, pp. 583-585 (1980).

Affiliated with

Also associated with

Rating

Reactive sputter etching apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reactive sputter etching apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive sputter etching apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1842986