Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-05-15
2007-05-15
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S003000, C438S064000, C438S712000, C257SE21218, C360S097010, C360S125020, C029S603070, C029S603160
Reexamination Certificate
active
10792330
ABSTRACT:
A method for forming a high aspect ratio magnetic structure in a magnetic write head using a combination of chemical mechanical polishing and reactive ion etching.
REFERENCES:
patent: 6330743 (2001-12-01), Iijima et al.
patent: 6377423 (2002-04-01), Dill, Jr. et al.
patent: 6515826 (2003-02-01), Hsiao et al.
patent: 6557242 (2003-05-01), Santini
patent: 6604275 (2003-08-01), Mino et al.
patent: 6762910 (2004-07-01), Knapp et al.
patent: 7086139 (2006-08-01), Lee et al.
patent: 7127801 (2006-10-01), Lahiri et al.
patent: 2001/0005297 (2001-06-01), Otsuka
patent: 2002/0012195 (2002-01-01), Lahiri et al.
patent: 2002/0018318 (2002-02-01), Narumi et al.
patent: 2002/0071209 (2002-06-01), Watanabe et al.
patent: 2002/0191350 (2002-12-01), Santini
patent: 2003/0169534 (2003-09-01), Santini
patent: 2005/0057851 (2005-03-01), Oike et al.
patent: 2005/0234659 (2005-10-01), Lin et al.
patent: 2006/0174474 (2006-08-01), Le
Guthrie Hung-Chin
Jiang Ming
Lo Jerry
Pentek Aron
Zheng Yi
Estrada Michelle
Hitachi Global Storage Technologies - Netherlands B.V.
Stark Jarrett J.
Zilka-Kotab, PC
LandOfFree
Reactive ion milling/RIE assisted CMP does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reactive ion milling/RIE assisted CMP, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive ion milling/RIE assisted CMP will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3788816