Reactive ion etching of aluminum

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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156 8, 156 22, 204164, C23C 1500, B01K 100, C23F 100

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active

039947939

ABSTRACT:
A process for etching aluminum wherein a masked layer of aluminum, supported on a substrate, is exposed to a plasma formed by imposing an RF voltage across at least two spaced electrodes in an ambient including a gas selected from the group consisting of CCl.sub.4, Cl.sub.2, Br.sub.2, HCl. The resultant conditions provide a reactive environment where the aluminum is bombarded with chlorine or bromine ions. The aluminum reacts with chlorine or bromine ions to form an aluminum chloride or bromide compound, which is volatile at the temperature of the sputtered substrate.

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patent: 3951709 (1976-04-01), Jacob
N. Hosokawa et al., "RF Sputter-Etching by Fluor-Chloro-Hydrocarbons," 6th Int'l. Vacuum Congress, Japan, Mar. 25-29, 1974.

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