Reactive ion etching method for producing deep dielectric isolat

Details Reactive ion etching method for producing deep dielectric isolat Reactive ion etching method for producing deep dielectric isolat

1977-09-13

1979-02-13

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, C23C 1500

Patent

active

041394429

ABSTRACT:
A method for producing deeply recessed oxidized regions in silicon. A series of deep trenches are formed in a silicon wafer by a reactive ion etching (RIE) method. In a first species, the trenches are of equal width. A block-off mask is selectively employed during part of the RIE process to produce trenches of unequal depth. The trench walls are thermally oxidized to completely fill in all of the trenches with oxide at the same time. In a second species, the trenches are of equal depth and width and of uniform spacing. In one aspect of the second species, the width of the trenches is equal to the distance between the trenches whereby the thermal oxidation completely fills in the trenches with oxide at the same time that the silicon between the trenches is fully converted to silicon oxide. In another aspect of the second species, the trenches are wider than the distance between the trenches whereby the thermal oxidation only partially fills in the trenches with oxide when the intervening silicon is fully converted to silicon oxide. In the latter aspect, the filling of the trenches is completed by the deposition of suitable material such as pyrolytically deposited silicon oxide.

REFERENCES:
patent: 3489656 (1970-01-01), Balde
patent: 3542551 (1970-11-01), Rice
patent: 3575740 (1971-04-01), Castrucci et al.
patent: 3649396 (1972-03-01), Hatzakis
patent: 3823015 (1974-07-01), Fassett
patent: 3966577 (1976-06-01), Hochberg
patent: 3998673 (1976-12-01), Chow

Affiliated with

Also associated with

Rating

Reactive ion etching method for producing deep dielectric isolat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reactive ion etching method for producing deep dielectric isolat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive ion etching method for producing deep dielectric isolat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-690110