Reactive ion etching method

Details Reactive ion etching method Reactive ion etching method

1984-07-11

1986-09-16

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

156643, 156646, 20419235, 502262, H01L 21306, C23C 1500

Patent

active

046120998

ABSTRACT:
According to the present invention, there is used a usual reactive ion etching apparatus (as shown in FIG. 1) including a vacuum vessel (1), exhaust means (2), etching gas supply means (4), plasma generating electrodes (6) and high frequency power supply (7). Substance having a catalytic action (8) is inserted in the etching gas supply means (4), by which the present invention is characterized. According to the present invention, a catalyst having an action of dehydrogenation, dehydrohalogenation or dehalogenation dependent on the molecular structure of a halogenized gas to be used, is inserted in the etching gas supply means in the path thereof, thereby to improve the etching speed and the etching selectively without the use of explosive or injurious gases such as hydrogen, chlorine, hydrogen chloride or hydrogen fluoride as additive gases.

REFERENCES:
patent: 1930350 (1933-10-01), Strosacker et al.
patent: 3864281 (1975-02-01), Ohorodnik et al.
patent: 4169815 (1979-10-01), Drehman
patent: 4240933 (1980-12-01), Copelin
patent: 4380488 (1983-04-01), Reichelderfer et al.
patent: 4442338 (1984-04-01), Yamazaki

Affiliated with

Also associated with

Rating

Reactive ion etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reactive ion etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive ion etching method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1994091