Reactive ion etching device

Details Reactive ion etching device Reactive ion etching device

1991-09-20

1995-05-16

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

216 61, 216 67, H01L 2100

Patent

active

054157188

ABSTRACT:
An object of this invention is to provide an RIE apparatus, for instance, with which conditions for an etching process such as an etching speed can be set easily, precisely, and with repeatability, by, for instance, introducing a novel concept that is the flow rate of charged particles which can directly be measured as a quantity proportional to the quantity of bombarded ions.
Accordingly, this invention is characterized in that said reactive ion etching apparatus has an electrode potential detecting means which detects the electric potential of said electrodes, a high-frequency power detecting means which detects an output from said high frequency power supply, a first computing means which computes an ion energy of said ions produced in a process of reactive ion etching based on said electric potential, a second computing means which computes the flow rate of charged particles related to said ions based on said detected output, and a control means which controls at least one of the following; the quantity of a gas led into said reaction chamber, an exhaust speed in said reaction chamber, and output from said high-frequency power supply, and the frequency of said high-frequency power, based on the result of an output from at least one of the aforesaid first computing means and said second computing means.

REFERENCES:
patent: 4602981 (1986-07-01), Chen et al.
patent: 4622094 (1986-11-01), Otsubo
International Electron Devices Meeting 1989, Technical Digest No. 89CH2637-7, IEEE, pp. 53-56 entitled "In Situ-Doped Epitaxial Silicon Film Growth at 250.degree. C. By An Ultra-Clean Low-Energy Bias Sputtering".

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