Reactive ion etching chamber

Details Reactive ion etching chamber Reactive ion etching chamber

1982-05-03

1983-05-24

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 204192E, C23C 1500

Patent

active

043849385

ABSTRACT:
A reactive ion etching chamber structure is designed to provide operation with uniformity in electric field and generated plasma so as to produce uniform, contaminant-free etching over large batches of silicon wafers. The anode chamber structure is cylindrical and physically symmetrical with respect to a round cathode plate with the internal surfaces of the chamber being free of any apertures, holes, recesses, or the like, having an opening dimension larger than one tenth the thickness of plasma "dark space". Under normal reactive ion etching conditions, such opening dimension is 1.5 mm or less and the distance between cathode and anode internal surface is 3.0 mm, or less.

REFERENCES:
patent: 3730873 (1973-05-01), Pompei et al.
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4264393 (1981-04-01), Gorin et al.
patent: 4297162 (1981-10-01), Munot et al.
patent: 4340461 (1982-07-01), Hendricks et al.
patent: 4352974 (1982-10-01), Mizutani

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