Reactive ion etching apparatus with interlaced perforated anode

Details Reactive ion etching apparatus with interlaced perforated anode Reactive ion etching apparatus with interlaced perforated anode

1981-06-02

1984-01-17

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

044262744

ABSTRACT:
Reactive Ion Etching (RIE) apparatus which provides for uniform etching of substrates regardless of their position on a cathode is disclosed. The RIE apparatus utilizes a perforated anode. These perforations are interlaced, intersected or partially blocked with various configurations of conductive elements. Concentric circle, starburst, spiral arm and spiral configurations may be interlaced with the perforations in the anode to obtain uniform etching of substrates regardless of their radial position on the cathode. With all these configurations, the common factor is that the interlaced configurations intersect more perforations near the center of the anode or catcher plate than are intersected at greater radial distances.

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Smits, J. Vac. Sci. Technol., 19(3) Sep./Oct. 1981, pp. 704-708.
Radiation Damage in Silicon Dioxide Films Exposed to Reactive Ion Etching by D. J. DiMaria, et al., "Journal of Applied Physics", 50(6) 6/79, p. 4015.
Reactive Sputter Etching System with Floating Grid by H. Shibayama et al., "Digest of Technical Papers-11th Conference (1979 International) on Solid State Devices, Tokyo".

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