Reactive ion etching apparatus

Details Reactive ion etching apparatus Reactive ion etching apparatus

1989-02-07

1989-12-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204298, B44C 122, H01L 21306, C03C 2506, B29C 3700

Patent

active

048865656

ABSTRACT:
A reactive ion etching apparatus used in the manufacturing process of semiconductor elements such as ICs and LSIs is herein disclosed. The material to be etched is supported by a chucking device disposed on a negative electrode and in this apparatus, a magnetic field parallel to the surface of the material to be etched is generated. The reactive ion etching is carried out while cooling the negative electrode to a temperature of not more than 0.degree. C.

REFERENCES:
patent: 4422896 (1983-12-01), Class et al.
patent: 4492610 (1985-01-01), Okano et al.
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4572759 (1986-02-01), Benzing
patent: 4581118 (1986-04-01), Class et al.
patent: 4771730 (1988-09-01), Tezuka et al.

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