Reaction chamber for a chemical vapor deposition apparatus and a

Details Reaction chamber for a chemical vapor deposition apparatus and a Reaction chamber for a chemical vapor deposition apparatus and a

1993-06-29

1995-06-20

Chaudhuri, Olik

Coating apparatus

Gas or vapor deposition

With treating means

118215, 118733, C23C 1600

Patent

active

054258120

ABSTRACT:
The main feature of the present invention is to provide a reaction chamber for a chemical vapor deposition apparatus improved to achieve a uniform film deposition of high accuracy stably. The apparatus includes a wafer heating stage 28 for holding a wafer 14 with the surface downwards and for heating the wafer 14. The wafer heating stage 28 rotates about the center of the stage. In a low position opposing the wafer heating stage 28, a gas supplying head 37 is provided so as to form a constant spacing region 53 for supplying reaction gas towards the wafer heating stage 28. The reaction chamber includes a reaction chamber forming member 54 surrounding in a circumferential direction the spacing region 53 between the wafer heating stage 28 and the gas supplying head 37 to establish a reaction chamber having the spacing region 53 closed. An exhaust outlet 33 is provided in the reaction chamber forming member 54 and along the whole circumference of the wafer heating stage 28, and having a configuration selected to discharge gas in the reaction chamber upwards obliquely.

REFERENCES:
patent: 4977855 (1990-12-01), Ohmi et al.
patent: 5076207 (1991-12-01), Washitani et al.
patent: 5166856 (1992-11-01), Liporace et al.
patent: 5304247 (1994-04-01), Kondo et al.
patent: 5328513 (1994-07-01), Suzuki et al.
patent: 5338363 (1994-08-01), Kawata et al.

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