Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1991-05-10
1992-12-08
Wojciechowicz, Edward J.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257757, 257617, H01L 2948
Patent
active
051702428
ABSTRACT:
A reaction barrier is formed at an interface region between adjacent layers of a multilayer composite integrated circuit by implanting one or more active ionic species at energies effective to place the ionic species at or near the interface. A further step may include annealing the structure formed above to promote efficacy of the reaction barrier.
REFERENCES:
patent: 4180546 (1979-12-01), Crowder et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4868633 (1989-09-01), Plumton et al.
patent: 4975753 (1990-12-01), Ema
patent: 4977440 (1990-12-01), Stevens
Murarka and Williams, "Dopant Redistribution In Silicide-Silicon and Silicide-Polycrystalline Silicon Bilayered Structures", J. Vac. Sci. Technol. B5(6), Nov./Dec. 1987, pp. 1674-1688.
C. B. Cooper and R. A. Powell, "The Use of Rapid Thermal Processing To Control Dopant Redistribution During Formation Of Tantalum and Molybdenum Silcide/N+ Polysilicon Bilayers", IEEE Electronic Device Letters, vol. EDL-6, May, 1985, p. 234.
Maekawa Masahiro
Stevens E. Henry
Johannesen Michael B.
Manzo Edward D.
Murphy Mark J.
NMB Semiconductor Company, Ltd.
Ramtron Corporation
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