Reaction barrier for a multilayer structure in an integrated cir

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257757, 257617, H01L 2948

Patent

active

051702428

ABSTRACT:
A reaction barrier is formed at an interface region between adjacent layers of a multilayer composite integrated circuit by implanting one or more active ionic species at energies effective to place the ionic species at or near the interface. A further step may include annealing the structure formed above to promote efficacy of the reaction barrier.

REFERENCES:
patent: 4180546 (1979-12-01), Crowder et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4868633 (1989-09-01), Plumton et al.
patent: 4975753 (1990-12-01), Ema
patent: 4977440 (1990-12-01), Stevens
Murarka and Williams, "Dopant Redistribution In Silicide-Silicon and Silicide-Polycrystalline Silicon Bilayered Structures", J. Vac. Sci. Technol. B5(6), Nov./Dec. 1987, pp. 1674-1688.
C. B. Cooper and R. A. Powell, "The Use of Rapid Thermal Processing To Control Dopant Redistribution During Formation Of Tantalum and Molybdenum Silcide/N+ Polysilicon Bilayers", IEEE Electronic Device Letters, vol. EDL-6, May, 1985, p. 234.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Reaction barrier for a multilayer structure in an integrated cir does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reaction barrier for a multilayer structure in an integrated cir, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reaction barrier for a multilayer structure in an integrated cir will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-963858

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.