Coating apparatus – Gas or vapor deposition
Patent
1996-06-10
1998-03-17
Bueker, Richard
Coating apparatus
Gas or vapor deposition
C23C 1600
Patent
active
057282234
ABSTRACT:
A reactant gas ejector head in a thin-film vapor deposition apparatus includes at least two reactant gas inlet passages for introducing reactant gases, a gas mixing chamber for mixing reactant gases introduced from the reactant gas inlet passages, and a nozzle disposed downstream of the gas mixing chamber for rectifying the mixed gases from the gas mixing chamber into a uniform flow and applying the uniform flow to a substrate.
REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4401052 (1983-08-01), Baron
patent: 4625678 (1986-12-01), Shioya
patent: 4748135 (1988-05-01), Frijlink
patent: 4980204 (1990-12-01), Fujii
patent: 4993358 (1991-02-01), Mahawili
patent: 5284519 (1994-02-01), Gadgil
U.S. Patent Application Serial No. 08/664,544, filed Jun. 17, 1996, entitled "Thin-Film Vapor Deposition Apparatus", by Hiroyuki Shinozaki et al.
Patent Abstracts of Japan, vol. 014, No. 057 (C-0684), 2 Feb. 1990 & JP-A-01 283375 (Fujitsu Ltd.), 14 Nov. 1989 * abstract *.
Patent Abstracts of Japan, vol. 009, No. 145 (C-287), Jun. 1985 & JP-A-60 027690 (Nippon Shinku Gijutsu KK), 12 Feb. 1985, * abstract *.
Patent Abstracts of Japan, vol. 011, No. 396 (E-568), 24 Dec. 1987 & JP-A-62 158317 (Ulvac Corp), 14 Jul. 1987 * abstract *.
Patent Abstracts of Japan, vol. 015, No. 181 (C-0830), 9 May 1991 & JP-A-03 044470 (Toshiba Corp), 26 Feb. 1991 * abstract *.
Patent Abstracts of Japan, vol. 017, No. 431 (E-1411), 10 Aug. 1993 & JP-A-05 090169 (Hitachi Ltd), 9 Apr. 1993 * abstract *.
IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980, New York, U.S., pp. 3972-3973, XP002013842 Anonymous: "Laminar Diffuser Head for Continuous CVD Devices with U-Shaped Carriers. Feb. 1980" * p. 3973, line 3 -line 7 *.
Fukunaga Yukio
Hongo Akihisa
Murakami Takeshi
Shinozaki Hiroyuki
Takeuchi Noriyuki
Bueker Richard
Ebara Corporation
LandOfFree
Reactant gas ejector head and thin-film vapor deposition apparat does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reactant gas ejector head and thin-film vapor deposition apparat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactant gas ejector head and thin-film vapor deposition apparat will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-954296