Reactant gas ejector head and thin-film vapor deposition apparat

Coating apparatus – Gas or vapor deposition

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C23C 1600

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active

057282234

ABSTRACT:
A reactant gas ejector head in a thin-film vapor deposition apparatus includes at least two reactant gas inlet passages for introducing reactant gases, a gas mixing chamber for mixing reactant gases introduced from the reactant gas inlet passages, and a nozzle disposed downstream of the gas mixing chamber for rectifying the mixed gases from the gas mixing chamber into a uniform flow and applying the uniform flow to a substrate.

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U.S. Patent Application Serial No. 08/664,544, filed Jun. 17, 1996, entitled "Thin-Film Vapor Deposition Apparatus", by Hiroyuki Shinozaki et al.
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