Reach-through isolation etching method for silicon-on-insulator

Details Reach-through isolation etching method for silicon-on-insulator Reach-through isolation etching method for silicon-on-insulator

1993-03-29

1994-04-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 65, 437 67, 437927, 148DIG50, 148DIG164, H01L 2176

Patent

active

053066596

ABSTRACT:
A method and the resulting product for isolating lightly doped silicon islands from each other and from a common substrate. The substrate is covered with a first heavily doped epi layer. The first layer is covered with a lightly doped second epi layer. A pair of spaced deep trenches are provided which extend from the top surface of the second layer, through the first layer and into the substrate. The interior walls of the trenches are lined with oxide. A pair of heavily doped reach-through diffusions extending from said top surface to the first layer is oriented perpendicularly to the deep trenches and fully extends between the trenches. The heavily doped reach-through diffusions and the contiguous first layer are removed by a single anisotropic etching step to yield silicon islands isolated by air except where the islands contact the oxide-lined deep trenches. The air isolation preferably is partially replaced with other dielectric material.

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