Re-writable memory with multiple memory layers

Details Re-writable memory with multiple memory layers Re-writable memory with multiple memory layers

2006-08-22

2006-08-22

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

C365S173000, C365S180000

Reexamination Certificate

active

07095643

ABSTRACT:
A re-writable memory with multiple memory layers. Using both terminals of a memory cell in a stacked cross point structure for selection purposes allows multiple layers of conductive lines to be selected as long as there is only one memory cell that has two terminals selected. Sharing logic over multiple layers allows driver sets to be reused.

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