Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2002-06-27
2004-06-29
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
06756163
ABSTRACT:
BACKGROUND
1. Field
Embodiments of the invention relate to the field of semiconductor, and more specifically, to lithography.
2. Background
Extreme ultraviolet lithography (EUVL) is a new generation lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. The EUVL system uses reflective optics and masks in which the image is formed in an absorbing metal.
EUVL masks are patterned from multilayer (ML) mask blanks. To achieve the highest image quality, mask blanks must be manufactured without defects. Due to high degree of accuracy requirements, these ML mask blanks are expensive. Current techniques to fabricate ML mask blanks are for one-time use only. After the mask blank is used for mask patterning, it is usually discarded. Reclaiming the ML blanks with the current design is impossible without sacrificing the quality of the mask.
REFERENCES:
patent: 6656643 (2003-12-01), Gupta et al.
John E. Bjorkholm, EUV Lithography-The Successor to Optical Lithography?, 8 pages, Intel Corp., Santa Clara.
Michael Lercel, et al., Examining the Challenges Posed by NGL Photomask Fabrication, MicroMagazine.com, 2001, 12 pages.
Rajendra Aithal, EUV Lithography: Competitor for the Next Generation Lithography, Dept. of Electrical Engineering, Institute for Micromanufacturing.
Dr. Lutz Aschke, Fit for Future—Chip Technology, 99/2001, Schott Info, 3 pages.
EUVL Mask Blank Defect Inspection, 2 pages http://www-mask.lbl.gov/Pages/masks.html.
Linus Fetter, et al.,Patterning of Membrane Masks for Projection e-Beam Lithography, Bell Laboratories, Lucent Technologies, NJ.
Peter J. Silverman, The Intel Lithography Roadmap, Intel Technology Journal, May 2002, pp. 55-61, vol. 6, Issue 02, Intel Corp.
Intel, Intel Delivers Photomask for EUV Lithography, Mar. 2001, Intel Labs.
Charles W. Gwynn, Extreme Ultraviolet Lithography for Next Generation IC's, Oct. 2000, MDR Forum.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Rosasco S.
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