Re-performable spin-on process

Details Re-performable spin-on process Re-performable spin-on process

2005-04-19

2005-04-19

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Repair or restoration

C438S014000, C438S782000, C438S788000

Reexamination Certificate

active

06881590

ABSTRACT:
First, a spin-on process is performed for forming a first dielectric layer over a plurality of metal interconnecting wires that are located on a semiconductor wafer. Then, an examining step is performed on the first dielectric layer, and the first dielectric layer is made to conform to a predetermined condition. Thereafter, an etching process is performed for completely removing the first dielectric layer. Subsequently, the semiconductor wafer is cleaned through use of a wet scrubber, and is dried. Finally, the spin-on process is re-performed for forming a second dielectric layer on the semiconductor wafer.

REFERENCES:
patent: 6207556 (2001-03-01), Hsu
patent: 6242355 (2001-06-01), Hu et al.
patent: 6319330 (2001-11-01), Jiang et al.
patent: 20020081758 (2002-06-01), Iriki
patent: 20020197749 (2002-12-01), Knight et al.
Stanley Wolf and Richard N. Tauber, “Silicon Processing for the VLSI Era—vol. 1: Process Technology,” Lattice Press, Sunset Beach, California, 1986, pp. 429-434, 518-520.

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