RDLL circuit for area reduction

Static information storage and retrieval – Addressing – Sync/clocking

Reexamination Certificate

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Details

C365S194000

Reexamination Certificate

active

06801472

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a register-controlled delay locked loop (RDLL) circuit; and, more particularly, to an RDLL circuit for reducing a chip area, which is used in a double data rate synchronous dynamic random access memory (DDR SDRAM).
DESCRIPTION OF RELATED ART
Recently, the most remarkable issue in a field of DRAM development is a synchronous DRAM (SDRAM) such as a double data rate SDRAM (DDR SDRAM) and a RAMBUS DRAM. It is expected that the synchronous DRAM will lead a memory market in the future since it can perform a high-speed operation compared to a general DRAM.
The delay locked loop (DLL) represents a circuit used to synchronize an internal clock of a synchronous memory device with an external clock without errors. That is, the DLL circuit is used to synchronize the internal clock with the external clock to control a timing delay, which occurs when the external clock is used in an internal circuit.
In
FIG. 1
, there is provided a block diagram of a conventional register-controlled delay locked loop (RDLL) circuit.
The RDLL circuit includes a first clock buffer
101
for generating a falling clock signal fclk
2
, which is actuated at a falling edge of an external clock signal CLK, based on an inverted external clock signal /CLK; a second clock buffer
102
for producing a rising clock signal rclkt
2
, which is activated at a rising edge of the external clock, based on the external clock signal CLK; a clock divider
103
for outputting one pulse signal per every 4 clocks based on the rising clock signal rclkt
2
; a first phase comparator
104
for comparing a reference signal ref from the clock divider
103
with a feedback signal feedback from a replica unit
117
; a first shift controller
105
for generating a right shift signal SR_
1
, which controls a shift register to move to the right, by using an output of the first phase comparator
104
; a first shift register
106
for adjusting an amount of delay by shifting its output signal to the right in response to the right shift signal SR_
1
provided from the first shift controller
105
; a first long delay line
107
for adjusting the amount of delay of the output signal of the first shift register
106
in response to an output signal delay_in of the clock divider
103
; a second long delay line
108
for adjusting the amount of delay of the output signal of the first shift register
106
in response to the rising clock signal rclkt
2
; a third long delay line
109
for adjusting the amount of delay of the output signal of the first shift register
106
in response to the falling clock signal fclk
2
; a second phase comparator
110
for comparing the reference signal ref from the clock divider
103
, the feedback signal feedback from the replica unit
117
and an output signal of the first shift controller
105
; a second shift controller
111
for producing a left shift signal SL_s and a right shift signal SR_s, which are used to control a shift register to move to left and right, respectively, by using an output signal of the second phase comparator
110
; a second shift register
112
for adjusting an amount of delay by shifting its output signal to left and right in response to the left shift signal SL_s and the right shift signal SR_s supplied from the second shift controller
111
; a first short delay line
113
for adjusting the amount of delay of the output signal of the second shift register
112
in response to the output signal of the first long delay line
107
; a second short delay line
114
for adjusting the amount of delay of the output signal of the second shift register
112
under the control of the output signal of the second long delay line
108
; a third short delay line
115
for adjusting the amount of delay of the output signal of the second shift register
112
in response to the output signal of the third long delay line
109
; a low-pass filter
116
, which is actuated by a delay locked loop locking signal D
11
_lockz from the second shift controller
111
, for counting times of result values outputted from the second phase comparator
110
; the replica unit
117
for compensating a timing difference between the external clock and the internal clock by using a feedback delay signal fb_dly
2
whose delay is adjusted from the first short delay line
113
; and a DLL driving unit
118
for providing the output signals from the second and the third short delay lines
114
and
115
to an internal circuit.
The operation of the RDLL circuit in
FIG. 1
will be briefly explained hereinafter.
The clock divider
113
generated the reference signal ref and the delay line input signal delay_in, which are activated for every 4 clocks, by receiving the rising clock signal rclkt
2
provided from the outside. The reference signal ref is compared with the feedback signal feedback representing a modeling result of a time delay to be compensated through the replica unit
117
. The delay line input signal delay_in is inputted to the first long delay line
107
and has a delay adjusted by the first shift register
106
. The output signal of the first long delay line
107
is transferred via the second short delay line
113
and the replica unit
117
, and then enables the feedback signal feedback.
The feedback signal feedback outputted from the replica unit
117
is compared with a rising edge of the reference signal ref at the first and the second phase comparator
104
and
110
. Then, the first shift and the second shift controller
105
and
111
generate the right shift signals SR_
1
and SR_s and the left shift signal SL_
1
, respectively, based on the compared results from the first and the second phase comparator
104
and
110
.
In
FIG. 2
, there is described a block diagram of the delay lines
107
to
109
and
113
to
115
employed in the conventional RDLL circuit.
Each delay unit included in the conventional delay lines includes a first NAND gate
201
for performing a NAND operation based on a rising clock signal and the output signal of the shift register; a second NAND gate
202
for executing a NAND operation based on an output signal of the first NAND gate
201
and a first input signal; a first inverter
203
for inverting an output signal of the second NAND gate
202
; a third NAND gate
204
for carrying out a NAND operation based on the rising clock signal and the output signal of the shift register; a fourth NAND gate
205
for performing a NAND operation based on an output signal of the third NAND gate
204
and an output signal of the first inverter
203
; a second inverter
206
for inverting an output signal of the fourth NAND gate
205
; a fifth NAND gate
207
for executing a NAND operation based on a falling clock signal and the output signal of the shift register; a sixth NAND gate
208
for carrying out a NAND operation based on an output signal of the fifth NAND gate
207
and the first input signal; a third inverter
209
for inverting an output signal of the sixth NAND gate
208
; a seventh NAND gate
210
for performing a NAND operation based on the falling clock signal and the output signal of the shift register; an eight NAND gate
211
for executing a NAND operation based on an output signal f the seventh NAND gate
210
and an output signal of the third inverter
209
; a fourth inverter
212
for inverting an output signal of the eight NAND gate
211
; a ninth NAND gate
213
for carrying out a NAND operation based on a delay signal and the output signal of the shift register; a tenth NAND gate
214
for performing a NAND operation based on an output signal of the ninth NAND gate
213
and the first input signal; a fifth inverter
215
for inverting an output signal of the tenth NAND gate
214
; an eleventh NAND gate
216
for executing a NAND operation based on the delay signal and the output signal of the shift register; a twelfth NAND gate
217
for carrying out a NAND operation based on an output signal of the eleventh NAND gate
216
and an output signal of the fifth inverter
215
; and a sixth inverter
218
for inverting an

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