Rayleigh surface-acoustic-wave device using ZnO(0001)/SiO.sub.2

Details Rayleigh surface-acoustic-wave device using ZnO(0001)/SiO.sub.2 Rayleigh surface-acoustic-wave device using ZnO(0001)/SiO.sub.2

1984-12-04

1985-12-31

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

333154, H01L 4108

Patent

active

045623716

ABSTRACT:
A surface acoustic wave device comprises a silicon substrate, a conductive layer provided on the silicon substrate, a silicon dioxide layer provided on the conductive layer, input and output electrodes provided on the silicon dioxide layer for input and output of a surface acoustic wave, and a zinc oxide layer provided on the electrodes. The silicon substrate is cut by a crystalline surface substantially equivalent to the (111)-surface, and the zinc oxide layer is such that its crystalline surface substantially equivalent to the (0001)-surface is parallel to the cut-surface of the silicon substrate, so that the surface acoustic wave entered by the input electrode travels to the output electrode in a direction substantially equivalent to the [112]-axis of the silicon substrate.

REFERENCES:
patent: 4037176 (1977-07-01), Ono et al.
patent: 4194171 (1980-03-01), Jelks
patent: 4480209 (1984-10-01), Okamoto et al.
Monolithic ZnO on Si Schottky Diode Storage Correlator, by R. L. Thornton et al, 1980, Ultrasonics Symposium, Boston Ma, (IEEE), Nov. 5-7, 1980, pp. 124-128.
Monolithic Sezawa Wave Storage Correlators and Convolvers, by J. E. Bowers et al, 1980 Ultrasonics Symposium, Boston Ma, (IEEE), Nov. 5-7, 1980, pp. 118-123.

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