Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
Patent
1992-09-28
1994-05-24
Chaudhuri, Olik
Metal treatment
Barrier layer stock material, p-n type
With contiguous layer doped to degeneracy
148 334, 148 336, 148300, 148301, 338 32R, 338 32S, 338 32H, H01L 2900
Patent
active
053145470
ABSTRACT:
A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane. The electron density establishes an average extrinsic electron density within the combined undoped and doped layers of the Group III-V compound. The density of erbium in the doped layers is preferably sufficient to yield an average extrinsic electron density of between about 1.times.10.sup.16 cm.sup.-3 and about 1.times.10.sup.18 cm.sup.-3, while also achieving a carrier mobility greater than about 30,000 cm.sup.-2 /V-s at room temperature.
REFERENCES:
patent: 4577322 (1986-03-01), Partin
patent: 4608694 (1986-08-01), Partin
patent: 4612644 (1987-09-01), Partin
patent: 4684805 (1987-08-01), Lee et al.
patent: 4722087 (1988-01-01), Partin
patent: 4747108 (1988-05-01), Partin et al.
patent: 4847666 (1989-07-01), Heremans et al.
patent: 5173127 (1992-12-01), Shimakura et al.
Heremans et al. "Erbium doping of Molecular Beam Epitaxy grown ImSb on InP", J. Vac. Sci. Tech. Bio(2), 1992, 659-663 month unknown.
Partin et al. "Samarium doping of Molecular Beam Epitaxially grown InSbonImP" J. Vac. Sci. Tech. B10(2), 1992, 873-876 no month.
Biefeld et al. "Epitaxial growth of InSb on GaAs by Metalorganic Chemical Vapor Deposition" Appl. Phy. Lett. 57(15), 1990, 1562-1565.
Evans et al., "Molecular-beam Epitaxial Growth and Characterization . . . " J. Vac. Sci. Technol. B 10(2), Mar./Apr. 1992 pp. 870-872.
Munekata et al., "Epitaxy of III-V Diluted Magnetic Semiconductor . . . "; J. Vac. Sci. Technol. B 8(2), Mar./Apr. 1990 pp. 176-180.
Uwai et al., "Growth of Erbium-Doped GaAs and InP by Metalorganic . . . "; Journal of Crystal Growth 93, (1988) pp. 583-588, month unknown.
Klein et al., "Photoluminescence and Magnetic Resonance Studies of . . . "; Appl. Phys. Lett. 58(5), Feb. 4, 1991 pp. 502-504.
Isshiki et al., "Impact Excitation of the Erbium-Related 1.54 .mu.m . . . "; Appl. Phys. Lett. 58(5), Feb. 4, 1991 pp. 484-486.
Allen, et al., "ErAs Epitaxial Layers Buried in GaAs: . . . "; Phys. Rev. Lett 62(19), May 8 1989 pp. 2309-2312.
Partin, "Lead Salt Quantum Effect Structures"; IEEE Journal of Quantum Electronics 24(8), Aug. 1988 pp. 1716-1726.
Heremans Joseph P.
Partin Dale L.
Thrush Christopher M.
Chaudhuri Olik
General Motors Corporation
Paladugu Ramamohau Rao
Wallace Robert J.
LandOfFree
Rare earth slab doping of group III-V compounds does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Rare earth slab doping of group III-V compounds, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rare earth slab doping of group III-V compounds will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1970554