Rare earth semiconductor laser

Details Rare earth semiconductor laser Rare earth semiconductor laser

1978-01-26

1980-03-11

Sikes, William L.

Oscillators

Molecular or particle resonant type

331 945H, H01S 318

Patent

active

041930444

ABSTRACT:
A rare earth semiconductor laser is disclosed comprising a semiconductor erial of the type Ln.sub.2 TX.sub.5 where Ln is a rare earth element, T is zirconium or hafnium, and X is sulfur or selenium. The semiconductor contains neodymium as a dopant rare earth ion and can be made to lase by applying an electric voltage.

REFERENCES:
patent: 3354406 (1967-11-01), Kiss
patent: 3833862 (1974-09-01), Wickersheim et al.

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