Rare-earth schottky diode structure

Details Rare-earth schottky diode structure Rare-earth schottky diode structure

1998-04-02

2000-07-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257471, 257472, 257473, 257485, 257486, 438575, 438580, H01L 27095, H01L 2947, H01L 29812, H01L 3107, H01L 31108

Patent

active

060877022

ABSTRACT:
A method for forming a Schottky diode structure is disclosed. The method includes the steps of: a) Providing a substrate; b) forming a rare-earth containing layer over the substrate; and c) forming a metal layer over the rare-earth containing layer. The Schottky diode structure with a rare-earth containing layer has the properties of high-temperature stability, high Schottky barrier height (SBH), and low reverse leakage current.

REFERENCES:
patent: 4394673 (1983-07-01), Thompson et al.
patent: 5079596 (1992-01-01), Smith et al.
patent: 5323053 (1994-06-01), Luryi et al.
patent: 5847437 (1998-12-01), Chang et al.
P. Moriarty et al., Chemical Bonding and Structure of the Sulfur Treated GaAs(111)b Surface, Apply. Phys. Lett. 67 (3), Jul. 17, 1995, pp. 383-385.

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